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Abstract Achieving efficient and stable blue light‐emitting perovskite nanocrystals is a significant challenge for next‐generation optoelectronic devices. Here, a dual‐ligand surface engineering strategy is reported for quasi‐2D CsPbBr₃nanoplatelets (NPLs) synthesized via ligand‐assisted reprecipitation. By synergistically co‐introducing didodecyldimethylammonium bromide to passivate bromine vacancies and hexylphosphonic acid to bind undercoordinated lead ions, the NPLs achieved a remarkable photoluminescence quantum yield of 93.7% and a narrow full‐width at half‐maximum of 19.27 nm. The enhanced photoluminescence (PL) lifetime (6.35 ns), reduced crystal disorder, slower bleach recovery kinetics, and improved thermal stability suggest that the suppressed non‐radiative pathways and strong exciton confinement (Eb = 141.76 meV) result from effective surface defect passivation and enhanced radiative recombination. Additionally, surface and structural characterizations confirmed the successful dual‐ligand integration and improved crystal integrity. The treated NPLs retained ∼57% PL under 450 min of ultraviolet (UV) light and ∼55% PL under 70% relative humidity, demonstrating strong UV and moisture stability. A prototype white light‐emitting device fabricated by integrating dual‐ligand‐treated NPLs achieves a wide color gamut (121% National Television System Committee, 90.4% ITU‐R Recommendation BT.2020), demonstrating their potential for high‐performance optoelectronics. This approach promotes defect suppression in low‐dimensional perovskites, paving the way for stable and efficient blue emitters. 

A universal method of micro-patterning thin quantum dot films is highly desired by industry to enable integration of quantum dot materials with optoelectronic devices. Many of the methods reported so far, including specially engineered photoresist or ink-jet printing, are either of poor yield, resolution limited, difficult to scale for mass production, overly expensive or sacrifice some optical quality of the quantum dots. In our previous work, we presented a dry photolithographic lift-off method for pixelization of solution-processed materials and demonstrated its application in patterning perovskite quantum dot pixels, 10 µm in diameter, to construct a static micro-display. In this report, we present further development of this method, and demonstrate high-resolution patterning (~1 µm diameter), full-scale processing on 100 mm wafer, and multi-color integration of two different varieties of quantum dots. Perovskite and cadmium-selenide quantum dots were adopted for the experimentation, but the method can be applied to other types of solution-processed materials. We also show the viability of this method for constructing high-resolution micro-arrays of quantum dot color-convertors by fabricating patterned films directly on top of a blue gallium-nitride LED substrate. The green perovskite quantum dots used for fabrication are synthesized and prepared by our research group via room temperature ligand-assisted reprecipitation method, and these synthesized quantum dots have a photoluminescent quantum yield of 93.6% and full-width half-maximum emission linewidth less than 20 nm. Our results demonstrate the viability of this method for use in scalable manufacturing of high-resolution micro-displays. 

We report a photolithography‐based technology for patterning quantum dot color converters for micro‐LED displays. A patterning resolution of ~1 µm is achieved. The method can be applied to any color converter materials. Integration of perovskite quantum dots and CdSe/ZnS quantum dots is demonstrated to show the versatility of the technology. 

In this paper, we demonstrate a new method to pattern perovskites using a dry lift-off process. By utilizing parylene-C as a sacrificial layer, patterns with <12 um features and multi-color patterns can be achieved.